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| UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage: VCEO=300V(UTC PZTA42) VCEO=200V(UTC PZTA43) *High current gain *Complement to UTC PZTA92/93 *Collector Power Dissipation: Pc(max)=1000mW 1 2 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER Collector-Base Voltage UTC PZTA42 UTC PZTA43 Collector-Emitter Voltage UTC PZTA42 UTC PZTA43 Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VALUE 300 200 UNIT V V VCEO VEBO Pc Ic Tj TSTG 300 200 6 1000 500 150 -55 ~ +150 V mW mA C C ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage UTC PZTA42 UTC PZTA43 Collector-Emitter Breakdown Voltage UTC PZTA42 UTC PZTA43 Emitter-Base Breakdown Voltage SYMBOL BVCBO TEST CONDITIONS Ic=100A,IE=0 MIN 300 200 TYP MAX UNIT V BVCEO Ic=1mA,IB=0 300 200 6 V V BVEBO IE=100A,Ic=0 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R207-005,B UTC PZTA42/43 PARAMETER Collector Cut-Off Current UTC PZTA42 UTC PZTA43 Emitter Cut-Off Current UTC PZTA42 UTC PZTA43 DC Current Gain(note) NPN EPITAXIAL SILICON TRANSISTOR SYMBOL ICBO VCB=200V,IE=0 VCB=160V,IE=0 IEBO VBE=6V,Ic=0 VBE=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=30mA Ic=20mA,IB=2mA Ic=20mA,IB=2mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz 100 100 80 80 80 300 0.2 0.90 50 V V MHz nA 100 100 nA TEST CONDITIONS MIN TYP MAX UNIT hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Base Capacitance UTCPZTA42 UTCPZTA43 VCE(sat) VBE(sat) fT Ccb 3 4 pF TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 DC Current Gain 3 10 1 10 Fig.2 Saturation Voltage Ic=10*IB VCE(sat),VBE(sat) (V) DC current Gain,H FE VCE=10V 2 10 0 10 VBE(sat) 1 10 -1 10 VCE(sat) 0 10 10 0 10 1 10 2 -2 10 10 -1 10 0 10 1 10 2 10 3 Collector current, Ic(mA) Collector current, Ic(mA) Fig.3 Capacitance 2 10 3 10 Fig.4 Current Gain Bandwidth product VCE=20V 1 10 Current gain bandwidth product(MHz) 2 IE=0 f=1MHz 2 10 -1 10 10 0 10 1 1 10 10 10 0 10 1 10 2 Collector-Base voltage(V) Collector current, Ic(mA) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R207-005,B UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R207-005,B |
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